PART |
Description |
Maker |
MTP33N10E |
SPP Power NChannel
|
ON Semiconductor
|
2SK220006 |
NCHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
|
Toshiba Semiconductor
|
5LP01N |
Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(超高速转换应用的P沟道硅MOSFET) P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Pico MOSFET Series
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device] Sanyo Semiconductor
|
VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
MCH5836 |
MOSFET : P-Channel Silicon MOSFET OSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
C2M0045170P |
Silicon Carbide Power MOSFET C2M MOSFET Technology
|
Cree, Inc
|
C2M0080170P |
Silicon Carbide Power MOSFET C2M MOSFET Technology
|
Cree, Inc
|
C3M0075120K |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
VEC2813 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
CPH5862 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
C2M0080120D |
Silicon Carbide Power MOSFET Z-FETTM MOSFET
|
Cree, Inc
|